Nor Flash Forum Discussions
我们用S25FL127SBF10芯片
目前发现一例仪表图片显示错误,更换新QSPI,故障解除。
卸下来的QSPI芯片换到正常显示仪表,故障依然在线。
将故障芯片用GZU EZP_XPRO V2工具读取数据,发现内部数据正常,与新刷好的QSPI读取数据内容相同。
我们分析认为QSPI可能由于外部电场干扰,芯片进入自锁保护状态,已经无法读取数据。
或者是芯片已经损毁。
我们希望知道,这颗芯片是否有异常自锁功能。另外,如果进入自锁异常保护状态,
我们需要怎么样才能退出来,正常工作。
Show LessRecently I heard that European Automotive OEMs are requesting A-SPICE from Components.
while studing A-SPICE, I was wondering if CYPRESS was preparing for or already achieving A-SPICE level.
As far as i checked on cypress homepage,
some of CYPRESS's products ,such as, NOR FLASH and FRAM meets the ISO26262 standard.
However, I couldn't find any documents about A-SPICE level.
Do CYPRESS have any preparation for A-SPICE?? (especially at NAND FLASH)
If cypress already have, please let me know what product it is.
Thanks in advance for your response.
Show LessDear ALL,
I want to know the parameters of S25FL512SAGMFIR13, as follows:
shelf life, exposure time after unpacking during production line, baking time and temperature after damp,MSL(Moisture Sensitive Level).
型号 | 描述 | 封装 | 制造商 | shelf life | 暴露时限(小时)Exposed limited time (hrs) | Baking oven setting/烘炉设定(Tray 125℃, tape and real 40℃) | MSL等级level | 备注 | |
温度 | 烘烤时间 | ||||||||
S25FL512SAGMFIR13 | IC_NOR_Flash_Serial-SPI_3V/3.3V_512Mb_9ns_16-Pin_SOP_S25FL512SAGMFIR13 | SSOP | CYPRESS |
---|
Best Regards,
Ferris
Show LessHi Cypress is suggesting to use 128S to replace this 127S. So could you pls help us to find the suitable part # of 128S to replace 127S? The 127S full part number is S25FL127SABMFI101, please suggest which 128S part can be the pin to pin w/o S/W modification replacement. Thanks, Leon 11/21
Show LessHello,
I have a question about the ECC function of S29GL512S10TFI020.
Does ECC protection work in the following usage methods 1) and 2)?
1)Write 0xFF with WriteBuffer.
Write data other than 0xFF by WriteBuffer (page unit) without performing Erase on the page
2)Write 0xFF and any value using WriteBuffer.
As an example, 16 word data is written with the first 8 words being 0xAA and the second 8 words being 0xFF.
Erase is not performed on the page, and 16 words with the first 8 words of 0xAA (same data as before write) and the second 8 words of 0x55 (arbitrary data) are written by WriteBuffer (page unit).
〇Whether WriteBuffer per page and data change only at 0xFF location, does ECC work without Erase processing?
When checking the ECC status at the time of access, the valid bit was 0 (valid).
Is the above access guaranteed by Cypress?
【問い合わせ内容】(Japanese)
以下の使用方法1)、2)にてECCによる保護は機能するか?
1)WriteBufferにより0xFFを書き込む。
そのページに対してEraseを実施せず、WriteBuffer(ページ単位)により0xFF以外のデータを書き込む
2)WriteBufferにより0xFFと任意の値を書き込む。
例として前半8ワードが0xAA、後半8ワードが0xFFの16ワードデータを書き込む。
そのページに対してEraseを実施せず、WriteBuffer(ページ単位)により前半8ワードが0xAA(書き込み前と同データ)、
後半8ワードが0x55(任意のデータ)の16ワードを書き込む。
(べージ単位のWriteBufferかつ、0xFF箇所のみのデータ変更であればErase処理がなくてもECCが機能するか)
なお、上記アクセス時のECCステータスを確認したところ、有効ビットが0(有効)でした。
上記アクセスがCypressが保証する使用方法か否かについてご確認頂きたくお願いいたします。
Best regards,
Sawai
Is an IBIS model available for S70GL02GT12FHIV10? If not, how do I request one?
We have recently tested the S29GL064S70TFI070 flash memory device as a drop-in, pin-compatible replacement for the S29GL064N90TFI070 which has now become obsolete.
We are finding that while the programming of the device and any subsequent reads/writes are successful, writing to the device takes significantly longer than on the obsolete device.
(A write of 300 bytes can take approx. 1.5 seconds on the old device, and 2.7 seconds on the new device)
We are surprised by this as the datasheets indicate that the new device has a 70ns access time compared to 90ns for the obsolete device – so we were expecting the writes to be a little faster if anything.
I have read application note “AN220470 – Migration from GL064N to GL064S” and it indicates that the devices should be compatible from a software perspective and I can’t see anything obvious that we need to modify to achieve comparable performance from the two devices.
Do you have an recommendations or advice that might help us achieve the same (or better) performance from the S29GL064S device?
Show LessHello,
An attempt was made to check the device ID on a board equipped with S29GL512T10TFI020 and S29GL256S90TFI020.
However, S29GL256S90TFI020 results in a status error (code: 97).
S29GL512T10TFI020 can read the device ID.
After that, the device ID of S29GL256S90TFI020 can be read by inputting the CFI Enter command before read the device ID.
Q1)
Is the status mode undefined when the flash ROM is started?
※I want to find out why S29GL256S90TFI020 has an error and S29GL512T10TFI020 has no error.
Q2)
When confirming the device ID, must I perform CFI Enter-> Read ID-> Reset?
Regards
Sawai
I am an electronic developer and need to ask a question depending on the needs of the project.
The S29GL series produced by your factory can now be purchased with the S29GL produced in 2008. Is there a technical difference?
Show LessHello, Philip,
The S25FL512SAGxx as well as the S70FL01GSAGxx (65nM MirrorBit) are active Ordering Part Numbers
(OPN’s) and are currently in production.
In regards to the S25FL256LAGxx (65nM Floating Gate), this is the highest memory density, currently available.
The 512Mb and 1Gb memory density are not currently, available.
Do you have a more specific Ordering Part Number (OPN) Suffix for the S25FL512SAGxx and S70FL01GSAGxx?
Best regards,
Albert
Show Less