S25FL164K: Do multiple program operation on the same page reduce data integrity?

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frhic_3865271
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Hi all

I'm currently using a S25FL164K SPI NOR flash in one of our designs. I'd like to program a few bytes on different offsets of a single page at different times. My question is if these multiple writes to the same page cause the flash to wear out. Or is it only the erase operation which causes wear out. The data sheet specifies only the erases per sector (which are at 100000) but not the writes per sectors.

Best regards

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Hi,

The 100K endurance cycles specified in the datasheet is "per sector". You can change data in a sector by either a program or erase operation 100K times.

You can find more details about endurance and data retention specs of our flash memories in following application note, http://www.cypress.com/file/361971/download

Thanks and Regards,

Sudheesh

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SudheeshK
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250 sign-ins First question asked 750 replies posted

Hi,

Both program and erase operations cause our flash to wear out. The number of program/erase cycles supported by our device S25FL164K is 100K. It is mentioned in section "11 Data Integrity" on page 84 of the datasheet (http://www.cypress.com/file/196886/download).

Thanks and Regards,

Sudheesh

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Hi Sudheesh

Thank you for your response. Is it correct that I can do a maximum of 100,000 program operation per page in this case?

And in which unit of the flash does the wear manifest by program operations (page, sector, block)?

Best regards

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Hi,

The 100K endurance cycles specified in the datasheet is "per sector". You can change data in a sector by either a program or erase operation 100K times.

You can find more details about endurance and data retention specs of our flash memories in following application note, http://www.cypress.com/file/361971/download

Thanks and Regards,

Sudheesh

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