Main Flash Memory Write / Erase Characteristics for S6E2C1AH0AGV2000A

[NoAr_1540581]

Hello

We are considering replacing S6E2C18H0AGV2000A with S6E2C1AH0AGV2000A.

* The questions refer to the following materials.
002-05033_S6E2C1_Series_32-bit_ARM_R_Cortex_R_-M4F_FM4_Microcontroller_Japanese.pdf

Q1)
About "12.8 Main Flash Memory Write / Erase Characteristics".

It is stated that 1.5MB / 2MB products require two chip erases compared to the used 1MB products. Does this mean that the chip must be erased twice for the main flash memory area before it can be erased?
Does this mean that the chip is erased only after performing two chip erase operations on the main flash memory area? Or does it mean "two times" that the erase operation needs to be performed for each of Flash Macro # 0 and Flash Macro # 1 (Main Flash Area and Dual Flash Area)?
(Check the programming manual and make a guess.)

Q2)
Also, as for the sector erase operation, is it necessary to perform one erase operation even for 1.5MB / 2MB products?

Best Regards

Arai

[Takashi_M · Accepted solution]

First of all, the datasheet you mentioned "002-05033_S6E2C1_Series_32-bit_ARM_R_Cortex_R_-M4F_FM4_Microcontroller_Japanese.pdf" has been obsolete, so please refer to the following datasheet.

S6E2C Series 32-bit ArmR CortexR-M4F, FM4 Microcontroller

For the answer 1, Yes, for devices with 1.5 MB or 2 MB of MainFlash memory, two erase cycles are required.

And, "two times" means that the erase operation needs to be performed for each of Flash Macro # 0 and Flash Macro # 1.

For the answer 2, you can perform single sector erase operation even 1.5MB / 2MB products to erase a specific sector.