1 Reply Latest reply on Aug 31, 2020 4:31 AM by PradiptaB_11

    About CY14B101KA questions

    RoPe_2386886

      您好,

      关于CY14B101KA 有些疑惑向您请教下;

      (1)CY14B101KA NVSRM相比FRAM来说,有哪些优缺点?

      (2)CY14B101KA NVSRM有无限次的读写,但是我看手册里面写着100万次的储存限制?这是什么意思,谢谢

        • 1. Re: About CY14B101KA questions
          PradiptaB_11

          你好罗宾,



          我将尝试简要回答FRAM和nvSRAM的差异。

          nvSRAM将为此进行优化,因此它们的读取/写入速度将比FRAM快,并且它们将需要附加的电容器来实现自动存储功能。如果操作速度是设计要求,则可以选择nvSRAM。 nvSRAM使用电荷在内部存储数据。

          FRAM针对低电流消耗进行了优化,从而延长了电池寿命(便携式设备的关键设计参数之一),并且不需要任何其他组件。 FRAM使用晶体极化在内部存储数据。如果您想对两者进行更详细的分析,请告诉我。



          nvSRAM架构有两个单元来存储信息。一个就是易失性单元,就像简单的SRAM一样。因此,与SRAM单元一样,您可以不受任何限制地对该单元进行读写。由于该单元,nvSRAM的读/写速度与SRAM相当。另一个单元是非易失性单元,它为存储器提供了非易失性功能。用户可以使用存储功能按照其要求将数据从易失性单元转移到非易失性单元,并且为此数据被写入非易失性单元。由于对非易失性单元的写入次数是有限的(对于任何非易失性存储器都是如此),因此数据表中提到对非易失性单元进行100万次写入的限制。对于大多数应用程序,此限制已足够。

           

          (English Translation

          Hi Robin,

           

          I will try to answer in general for the differences in FRAM and nvSRAM in brief.

          nvSRAM will read/write at faster speeds than FRAM  as they are optimized for this and they will require an additional Capacitor for Autostore functionality. If speed of operation is a design requirement you can opt for nvSRAM. nvSRAM uses charge to store data internally.

          FRAM is optimized for low current consumption which leads to more battery life (one of the critical design parameters for portable devices) and does not need any additional components. FRAM uses crystal polarization to store data internally. Let me know if you want more detailed analysis for the two.

           

          nvSRAM architecture has two cells to store the information. One is the volatile cell just like a simple SRAM will have. Hence you can read and write to this cell without any limits just as the case with the SRAM cell. It is due to this cell the read/write speeds for nvSRAM is comparable to that of a SRAM. The other cell is the non volatile cell, which gives the memory its non volatile feature. The user can shift the data from the volatile cell to non volatile cell as per their requirements using the store functionality and for this data is written to the non volatile cell. Since the number of writes to a non volatile cell is limited (true for any non volatile memory) hence the datasheet mentions a limit of 1 million writes to the non volatile cell. For most applications this limit is suffice. )