The AN 15979 is not applicable to FRAM memory products like FM28V100-TG. The non volatile SRAM memory and FRAM memory are two different branches of memory chips under Non volatile memory portfolio. FRAM uses crystal polarization instead of charge to store data and hence the above app note is not applicable to the FRAM parts. I am attaching a SER report for our FRAM devices. You can go through this and find more details for the SEU susceptibility.
And thanks for your answer and the attached documents, really helpful (and interesting for the "technology brief")
I have two remaining question (sorry for that, I'm far from an expert in this subject ).
- In the table and per line, we have SBU=0, MBU=0 and No SEL but the SER not equal to 0. Is there a relation linking some of these parameter or are they independent ?
- I see that the value are at NY city altitude (so I guess 14 neutrons/cm2/hr). I'm in particular interested in the MBU rate but from this value, could we make some conclusions about the rate considering a flux of 6000 neutrons/cm2/hr (or should I work with SER with for example 0.73*6000/14 (cross product) ?)
- What are in the table U3, U7 and U8 (sorry by advance if the question is not clever )
Thanks again for your answer !
I suggest you to read the below document. (Page 1 to 3) It will provide you a good understanding for the terms and their relations if any. ( Even i am not an expert in this field )
You can calculate the theoretical SER rate by using the unitary method as you used in the above post.
U3, U7 and U8 represent different units that were tested. ( This question actually got me thinking at first )
Thanks for the document and for the info. It helps !