The write/Erase characteristics of the FLASH memory are described in the data sheet.
(eg CY9B520M Series of datasheet)
I would like to confirm the worst case (Max) conditions described here.
The condition with the shortest erase time.
→ For example, when the voltage is high (VCC = 5.5V) and the temperature is low, the erase time is the shortest?
The condition with the longest erase time
→ For example, when the voltage is low (VCC = 2.7V) and the temperature is high, the erase time is the longest?
Please teach if there are other factors.
→ For example,
-Erase time increases as the number of erasures increases
The range of Sector erase time "Typ/Max" has not been characterized by VCC and temperature.
Of course, the erase time would be varied in that range with condition of VCC and temperature.
The more important factor for that erase time range "Typ/Max" would be decided with device aging degradation. (answer for Q3)