Thank you for contacting Cypress Semiconductor.
Both the S29GL064N and the S29JL064J are 3.0V FLASH products with 64Mb in memory density.
However, the sector architecture may differ between the two FLASH memory devices.
It is important to highlight that the Accelerated Programming (VHH) feature (which uses a high voltage)
is used in a production environment to increase faster manufacturing and production throughput at the
factory. Note that VHH must not be asserted on WP#/ACC for operations other than accelerated programming,
or device damage may result.
VHH = 11.5V to 12.5V
Chip Erase : ~64secs
Full (16-word/32-byte) Write Buffer Program. : ~240uS
Accel. Full (16-word/32-byte) Write Buffer Program : ~200uS
URL to S29GL046N datasheet :
S29JL064J : VHH = 8.5V to 9.5V
VHH = 8.5V to 9.5V
Chip Erase : ~71secs
Individual Byte/Word Program. : ~6uS
Accel. Individual Byte/Word Program : ~4uS
URL to S29JL064J datasheet :
Hope this helps...
I looks like erasing is slower on the S29JL064J but writing is up to twice as fast. So I will aim implementation of this particular PCB for that EEPROM.