I am using Cypress NAND Flash memory: S34ML04G200TFI000 IC for data storage (Data acquisition).
I am using Page program operation with random data input (80h, 85h, 10h commands) for our application to store data (main memory) + Parity bits (Spare memory).
If any page program or block erase operation failed for particular a block, as per datasheet we understood that block is Bad block.
Now the query is:
Whether NAND Flash will automatically update spare memory 1st data of Failed block with Non FF value?
Or I have to write (program) spare memory 1st data value as Non FF value?
Hi Ujwala Sadalagi,
Our NAND devices will not mark automatically, user has to do this. Please find more details about bad block management in the following knowledge base article, Marking and Recognizing Bad Blocks in NAND Flash - KBA219305.
Thanks and Regards,