1 Reply Latest reply on Jun 24, 2018 11:19 PM by SudheeshK_26

    When NAND Flash Program/Erase operation is failed



      I am using Cypress NAND Flash memory: S34ML04G200TFI000 IC for data storage (Data acquisition). 


      I am using Page program operation with random data input (80h, 85h, 10h commands) for our application to store data (main memory) + Parity bits (Spare memory).


      If any page program or block erase operation failed for particular a block, as per datasheet we understood that block is Bad block.


      Now the query is:


      Whether NAND Flash will automatically update spare memory 1st data of Failed block with Non FF value? 


      Or  I have to write (program) spare memory 1st data value as Non FF value?