1 Reply Latest reply on Jun 24, 2018 11:19 PM by SudheeshK_26

    When NAND Flash Program/Erase operation is failed

      Hi,

       

      I am using Cypress NAND Flash memory: S34ML04G200TFI000 IC for data storage (Data acquisition). 

       

      I am using Page program operation with random data input (80h, 85h, 10h commands) for our application to store data (main memory) + Parity bits (Spare memory).

       

      If any page program or block erase operation failed for particular a block, as per datasheet we understood that block is Bad block.

       

      Now the query is:

       

      Whether NAND Flash will automatically update spare memory 1st data of Failed block with Non FF value? 

       

      Or  I have to write (program) spare memory 1st data value as Non FF value?