5 Replies Latest reply on Mar 27, 2018 8:29 AM by zhfe

    Accelerated Write Buffer Programming Time for S29GL512T

    user_511731882

      Hi Team,

       

      Please let me know the accelerated write buffer programming time for S29GL512T.

      And, please let me know the specific function of acceleration programming.
      Think of it as a function to speed up writing, but it can not be read from the datasheet.

       

      Thanks and regards,

       

        • 1. Re: Accelerated Write Buffer Programming Time for S29GL512T
          zhfe

          Hi,

           

          S29GL512T does allow Vhh (12V) to be applied on the WP#/ACC pin; however, the high voltage will only cause the device to go into Unlock Bypass mode, where the user can save some CPU cycles by not having to enter unlock cycles. It will not have impact on the actual embedded operation time.

           

          As a result, the WB Programming time is the same as the normal mode, but the user can skip the two unlock cycles in the WB Programming command sequence.

           

          Hope this answers your question.

           

          Best regards,

          Zhi

          • 2. Re: Accelerated Write Buffer Programming Time for S29GL512T
            user_511731882

            Hi,

             

            Thank you for your information.

            Is recognition the same as acceleration mode of S29GL-P series and S29GL-N series?The accelerated write buffer programming time is specified in S29GL-P and S29GL-N datasheet.
            Why is not the accelerated write buffer programming time specified in S29GL-T datasheet?

             

            Thanks and regards,

             

            • 3. Re: Accelerated Write Buffer Programming Time for S29GL512T
              zhfe

              Hi,

               

              As I said, S29GL-T is different from S29GL-P and S29GL-N. In S29GL-T, there is no impact on the programming time, or programming current even if a high voltage is applied to ACC pin. Therefore, the programming time is the same as the programming time with normal voltage. In S29GL-P and S29GL-N, the programming time is actually faster so it is defined as a separate parameter. In another word, when applying high voltage to ACC pin, S29GL-P and S29GL-N will consume high programming current, but S29GL-T will consume the same current as in the normal voltage condition.

               

              Thanks,

              Zhi

              • 4. Re: Accelerated Write Buffer Programming Time for S29GL512T
                user_511731882

                Hi,

                 

                Thank you for your information.

                I understand this.

                • 5. Re: Accelerated Write Buffer Programming Time for S29GL512T
                  zhfe

                  To conclude this thread, here is the summary of Accelerated Programming feature.

                   

                  Accelerated Programming Operation refers to the method of applying VHH (ex. 12V) to the WP#/ACC pin of the flash device in order to reduce the programming time. However, this feature is a little bit different in different flash families.

                   

                  The following table shows the differences:

                   

                  Device Family

                  MirrorBit Technology

                  When applying VHH to the WP#/ACC pin

                  Enter Unlock Bypass mode

                  Temporarily unlock all sectors

                  Reduce programming time

                  Consume higher current

                  S29GL-N

                  110nm

                  Yes

                  Yes

                  Yes

                  Yes

                  S29GL-P

                  90nm

                  Yes

                  No

                  Yes

                  Yes

                  S29GL-R

                  65nm

                  Not supported

                  S29GL-S

                  65nm

                  Not supported

                  S29GL-T

                  45nm

                  Yes

                  No

                  No

                  No

                   

                   

                  Thanks,

                  Zhi