Nor Flash

PTNに基づき、後継品の評価において。

従来型格：S29GL064N90TFI030

Migraton to：S29GL064S70TFI030

EOL置換評価において、後継品は、書込みに3倍程度時間が掛かるとの指摘を受けました。

0.65nm（Automatic ECC)品においては、具体的に３倍かどうかは別にして、

従来より書込み時間がかかる、は回避できない事象でしょうか？

あるいは、回避アドバイスがありましたら、教えて下さい。

I had an issue with the 4READ command.

Data is output one clock later than expected.

It seems that the change_addr signal is to blame: it fires depending on the ADS bit at 24 or32 bit boundary.

For commands configurable between 3/4 byte addresses this is correct, but i.m.o. 4READ always is 4 byte address,

so change_addr should always fire at32 bit boundary.

Please check whether assumption above is correct.

Regards,  Wim

My code mod to remove issue:

IF (current_state /= STANDBY) AND
    (Instruct /= WRR) AND (Instruct /= WRAR) THEN
 IF ((Instruct = READ) AND to_nat(WRR_reg_in) = 0) OR Instruct /= READ THEN
-- IF ADS = '1' AND address_cnt = 32 THEN
    IF address_cnt = 32 THEN
      change_addr <= '1', '0' AFTER 1 ns;
    ELSIF ADS = '0' AND address_cnt = 24 THEN
      change_addr <= '1', '0' AFTER 1 ns;
   END IF;
END IF;

Hi,

the datasheet states an Erase Endurance of 1000 cycles and a Data Retention of 100 years after 10000 cycles.

Does that mean that the device can endure 10000 Program/Erase cycles without degradation or damage?

On what conditions is the limit of 1000 cycles based?

Thanks

Hey Cypress,

We are using S29GL256S90GHI010 with 56-ball VBU056 LF package on our design.

Can you please provide us the thermal resistance (junction to ambient) for this package?

In addition, can you please note what is the maximum temperature allowed on the junction of a voltaged (working) device?

Adiel

We are using the Flash memory S25FL256SAGMFV01 in our system  for storing data logs , whenever we do sector erase we are facing the reset happening in the system,

kindly someone please provide help