Nor Flash

Dear Sir or Madam,

I'm looking for BIS model for S29GL01GS11FHI010.

Could you let me know where will I find it, please?

Best Regards,

Fukaya

Hello,

Customers are considering replacing Micron's NOR-Flash (PC28F512M29EWL) with S29GL512S10FHI020.

At the Micron's footprint, F7 is defined as #BYTE, and the current board inputs 3.3V directly to the F7 pin.

The F7 pin of S29GL512S10FHI020 is defined as RFU. Does the IC work even if 3.3V is input here?
(RFU is described as not currently connected internally in the datasheet)

I understand that the recommended processing of RFU pins is unconnected and not used for PCB routing.
However, since the board cannot be changed in time, I would like to replace NOR Flash without changing the circuit.

If E7pin is used for other purposes in the future, can customers receive notifications such as PCN?

Micron's datasheet
https://media-www.micron.com/-/media/client/global/documents/products/data-sheet/nor-flash/parallel/m29ew/m29ew_256mb_2gb.pdf?rev=8b0ce4778c8f4fe3a83ea294c499c3bc

Best Regards,

Naoaki Morimoto

Using device S29GL01GT12DHVV10.  Trying to use the device ID and noticed the data sheets for S29GL01GT and S29GL01GS appear to have the same device IDs, even though they are built on different process nodes.  Is it correct that they have the same device IDs?  Please confirm the correct device ID for S29GL01GT12.

Good Evening

I am aware that the PSRAM(SPH032D97OR1R) internal to the S71GL064N memory device has an internal refresh controller.

PSRAM is a volatile memory and will hold data as long as power is present.

The Flash memory side has storage and should be non-volatile and hold data and should be effected by data retention ?

If the device is programmed and then used with power what is the data retention period before it starts  to lose the data internally ?

What is the read/write cycle of this device ?

&

Also what is the data retention period when the device is programmed and then turned off

Good Evening

I am aware that the PSRAM(SPH032D97OR1R) internal to the S71GL064N memory device has an internal refresh controller.

PSRAM is a volatile memory and will hold data as long as power is present.

If the device is programmed and then used with power what is the data retention period before it starts  to lose the data internally ?

&

Also what is the data retention period when the device is programmed and then turned off ?

Hi

i work with S70FL01GS.

I want to work with 32 bit address and to do PP

Dose i need to write "12" command to write or i need to configure  ExtAdd=1 and after it to send "02" command.

(Page 96 Data sheet of S25FL512S

This 02h (ExtAdd=1) is followed by a 4-byte address (A31-A0) or
 This 12h is followed by a 4-byte address (A31-A0))

Thanks

Elyasaf