Nor Flash

Hello,

I have probed address line 25 and 26 to see it toggle between bank 0-3. I am able to write erase and see the device ID up to sector address 3FF0000H which shows the first flash in the block diagram, yet when I try to write anything above or even read device ID above, I cannot read any device id, is there a algorithm or something that chooses which flash block it uses besides bit 26 and 25 on the pin side?

Thanks,

George M. 

After power up, I need to wait 25mS in order to read data from the Flash correctly.   Anything less then 25mS and I get data errors.

Is the datasheet correct is specifying 35uS for rising edge of Vcc/Vccio to rising edge of RESET#?

Thanks,

Tim

Trying to migrate the S29GL064N90TF010 part to the new GL-S family of NOR flash ICs, AN98586 specifically does not cover S29GL064GS. 

Is this part excluded because it there are no noteworthy issues when transitioning from between 64Mb parts? Or is there another document/information detailing what is different for these parts between series? 

Hello,

we would need to replace a standard QSPI 256Mbit NOR flash memory, 1.8V, package FBGA 6x8mm, ball array 5x5, with an equivalent Radiation Hardened or Radiation Tolerant memory. 

If 256Mbit are not available, we could decrease size by some amount 128Mb or 64Mb maybe.

Any suggestion?

Thanks

Andrea 

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We are using the Military grade version of the SPI FLASH Memory S25FL512S.

The exact PN is: S25FL512SAGBAEC10. The datasheet states that:

 Cycling Endurance – 100 Program-Erase Cycles

Does this mean we can not Erase-Program more than 100 times?

The project is in developmental state. The device is used in lab environment and never exceed 85C operating temperature. Lately we are experiencing difficulty to program the device without errors.