I understand the basics of raw NAND. It supports block erase and page read/write. NAND datasheets mention the program/erase (P/E) cycle as the limit to the number of writes/erases that can be done on NAND respectively. I also understand that after P/E cycles are exhausted for a particular page/block respectively that particular block goes bad and data in the block cannot be changed (0's cannot be reverted to 1's once the block goes bad).
My question is, can a block go bad before the P/E cycles for that particular block are exhausted? and can issues like sudden power loss, voltage fluctuations cause a block to go bad?
The question is specific to the generation of bad blocks and not other issues like read-disturb or ECC corruption. The question also doesn't count factory-generated BAD blocks.
