Non Volatile RAM (F-RAM & NVSRAM) Forum Discussions

Hello.

We are using your F-ram FM25V20A and a question came up :

When we write data to an address In the f-ram does the f-ram write it to the same cell or internally manage addresses?

In other words, if we write to address X"00000001" for example are we guaranteed that the previous value we wrote to that address has been
overwritten or does the f-ram internal logic just have the  address X"00000001" now point to a different internal cell with the new value
and the previous value still exists in the previous cell?

Hi Cypress

We have new requirement for a 3V SPI FRAM with 85 degC, It has more than 256K bits.  Can you give us the recommendation of 512K, 1M, 2M FRAM parts in Cypress ,  Thanks !!

Hi,

FM24C16B supports 100kbps, 400kbps and 1Mbps.

How do you recognize each mode?

For example, confirm for the period when the clock is low.

Or FRAM only confirms the clock edge, and FRAM can support any clock speed.

There is a problem that data in FRAM disappears.
It turns out that there are times when the clock speed of the I2C master changes.
As a result, We would like to determine if there is a time when the I2C slave FRAM cannot respond.

Regards,

Hi,

CY14V101QS is 1-Mbit nvSRAM.

Is t_STORE still in a maximum of 8 ms, the same as 4-Mbit nvSRAM STORE?

Thanks.

The datasheet for the CY14B101LA device states that the nWE pin should be held high during power up until the MPU comes out of reset.  Is it acceptable to hold the nCS pin high during power up until the MPU comes out of reset instead? This would also prevent any unwanted SRAM read or write cycles.

Dear,

Could you explain the sentence page 9 of datasheet : "Maximum accumulated storage" for 85°C and 125°C?

How memory works for high temperature?

Thank you

Regards

FM28V020のデータシート page 8にAC Test Conditionsの記載があります。

このパラメータはあくまでpage 9以降のCharacterizationをするために行ったテストの要件であって、

このパラメータをユーザが守る必要が無い、という理解ですが正しいでしょうか。

例えば、Input rise and fall times (10%–90%)  が3ns以内、となっていますが、

実設計ではFM28の入力に対して3nsでのRise/Fall Timeは守れていません(もう少しスルーレートが低いです)。

ですが、リードサイクル/ライトサイクルを満足していれば仕様上は問題ないという理解です。

この理解は正しいでしょうか。

Hi Friends,

I want to use Nonvolatile memory in my design, which would be better to replace EEPROM (8K/16K)?

I need a cost-effective solution.

-Chinmay