I want to use several 8Mbit x8 SPI 40MHz Excelon LP F-RAM devices in an application where I need to convert signals coming from a parallel x8 SRAM interface to 40MHz SPI signals and also 40MHz SPI signals sourced from the SPI F-RAM device to signals destined for the x8 parallel SRAM interface. As for the x8 parallel SRAM interface timings, conservatively, I have a memory address setup time of around 250ns, a memory address hold time of around 1250ns and a chip enable hold time of around 750ns ( I'm not quite sure of the timings right now and I know I am missing some timing information for some of the x8 parallel SRAM signals ). I plan on doing this with an ultra-low-power MCU, but, I'd need to use cycle-stretching on the Cypress F-RAM device(s). Is the above kind of conversion doable, especially the cycle stretching?
Dear Support team,
FRAM FM25V10 datasheet mentions that the device specifications are guaranteed over an industrial temperature range of –40°C to +85°C. But under maximum ratings section Ambient temperature range with power applied is mentioned to be –55°C to +125°C. I was wondering whether it is possible to operate this FRAM above 85°C upto 125°C? Will it behave in the same manner as specified in the datasheet, in this case?
Thanking you in advance.Show Less
Greetings for the day!
Myself Vipul Prajapati working as Sr. Engineer at Eaton India Innovation Center, Pune, India for the Power system division group. This is with reference to get the details of standard bitbang SPI routine sample code to do word write into cypress FRAM - CY15E016Q.
We are currently working for a project which uses NXP Legacy automotive MCU (PN - M68HC16Z1). To support the ongoing firmware development, we would require to write SPI bitbang routine in existing FW which can write word by word data to FRAM chip. As this project is with legacy development, running from last 18 years with very limited MCU support, It would be difficult for us to write SPI routine which can do the job without affecting the existing FW.
Could you please help us to provide the sample SPI routine which can be utilize to write word by word data to FRAM chip CY15E016Q? Thanks in advance!Show Less
16ビットバスとして、CS1空間に接続しています。(アドレス0x400 0000-0x40F FFFF の1MB)
0x40F FFE0～0x40F FFFFの領域で、ここは内蔵のRTCの値はないものと認識しています。
|040FFFE0||0010 00AA 00AA 00AA|
|040FFFE8||0080 0080 0008 0000|
|040FFFF0||0000 0026 0001 0001|
|040FFFF8||0001 0001 0001 0001|
Please give us FM28V202A-TG Reel Drawing.
We need it to re-tape and re-reel FM28V202A-TG.
Shun FurusawaShow Less
Check out the Article "Ensuring fail-safe data storage in battery-powered IoT sensor nodes".
In this article, we will examine the often neglected but most important aspect of any sensor node – local memory.
F-RAM, such as the Excelon F-RAM from Cypress, addresses all concerns related to memory, making it highly efficient for IoT-based data logging. F-RAM endurance is 10^14 write/read cycles and provides immediate non-volatility and byte accessibility. Its low write/read current of 2.4mA, standby current of 2.3uA and hibernate current of 0.1uA, yield extremely low power such as is required for battery-operated IoT devices.Show Less
Will NVSRAM's STORE and RECALL processes work after the STORE process exceeds 1 million times?
What happens if the STORE and RECALL processes do not work?Show Less