Non Volatile RAM (F-RAM & NVSRAM)

I want to use several 8Mbit x8 SPI 40MHz Excelon LP F-RAM devices in an application where I need to convert signals coming from a parallel x8 SRAM interface to 40MHz SPI signals and also 40MHz SPI signals sourced from the SPI F-RAM device to signals destined for the x8 parallel SRAM interface. As for the x8 parallel SRAM interface timings, conservatively, I have a memory address setup time of around 250ns, a memory address hold time of around 1250ns and a chip enable hold time of around 750ns ( I'm not quite sure of the timings right now and I know I am missing some timing information for some of the x8 parallel SRAM signals ). I plan on doing this with an ultra-low-power MCU, but, I'd need to use cycle-stretching on the Cypress F-RAM device(s). Is the above kind of conversion doable, especially the cycle stretching?

( N.B. The devices I want to use are one of these : https://www.cypress.com/file/444186/download , https://www.cypress.com/file/444186/download )

Thanks,

jdb2

Dear Support team,

FRAM FM25V10 datasheet mentions that the device specifications are guaranteed over an industrial temperature range of –40°C to +85°C. But under maximum ratings section Ambient temperature range with power applied is mentioned to be –55°C to +125°C. I was wondering whether it is possible to operate this FRAM above 85°C upto 125°C?  Will it behave in the same manner as specified in the datasheet, in this case?

Thanking you in advance.

Hello Community,

Greetings for the day!

Myself Vipul Prajapati working as Sr. Engineer at Eaton India Innovation Center, Pune, India for the Power system division group. This is with reference to get the details of standard bitbang SPI routine sample code to do word write into cypress FRAM - CY15E016Q.

We are currently working for a project which uses NXP Legacy automotive MCU (PN - M68HC16Z1). To support the ongoing firmware development, we would require to write SPI bitbang routine in existing FW which can write word by word data to FRAM chip. As this project is with legacy development, running from last 18 years with very limited MCU support, It would be difficult for us to write SPI routine which can do the job without affecting the existing FW.

Could you please help us to provide the sample SPI routine which can be utilize to write word by word data to FRAM chip CY15E016Q?   Thanks in advance!

我們使用FM24CL64B-GTR于产品应用。

因为之前是有看到富士通的FRAM的datasheet中是有关于ESD和闩锁方面的说明的，因此想了解下CYPRESS的FRAM是否也有这方面的说明，只是未在datasheet中展示，另外FRAM芯片设计中是否又对闩锁问题在半导体层面做加强处理或工艺加强？

如果FRAM因為ESD發生閂鎖，那對存儲在裡面的資料會有什麼影響?

閂鎖後輕的結果或者嚴重的後果會是什麼?

Check out the Article "Ensuring fail-safe data storage in battery-powered IoT sensor nodes".

In this article, we will examine the often neglected but most important aspect of any sensor node – local memory.

F-RAM, such as the Excelon F-RAM from Cypress, addresses all concerns related to memory, making it highly efficient for IoT-based data logging. F-RAM endurance is 10^14 write/read cycles and provides immediate non-volatility and byte accessibility. Its low write/read current of 2.4mA, standby current of 2.3uA and hibernate current of 0.1uA, yield extremely low power such as is required for battery-operated IoT devices.