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Non Volatile RAM (F-RAM & NVSRAM)

Employee

Check out the Article "Ensuring fail-safe data storage in battery-powered IoT sensor nodes".

In this article, we will examine the often neglected but most important aspect of any sensor node – local memory.

F-RAM, such as the Excelon F-RAM from Cypress, addresses all concerns related to memory, making it highly efficient for IoT-based data logging. F-RAM endurance is 10^14 write/read cycles and provides immediate non-volatility and byte accessibility. Its low write/read current of 2.4mA, standby current of 2.3uA and hibernate current of 0.1uA, yield extremely low power such as is required for battery-operated IoT devices.

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