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Optimizing Program/Erase Performance on SEMPER™ Flash Memories - KBA233190
Follow these options to optimize your SEMPERTM Flash Memory program and erase performance:
All Infineon Flash Memories leave the factory in a pre-erased state; so you do not have to erase them again during your production. This will save a lot of time.
Increasing the power supply (VCC) level will improve the program/erase performance.
Enabling the Blank check feature by setting the configuration register-3 CFR3x (BLKCHK) bit to 1 will skip re-erasing empty sectors, thus saving time.
Reduce the number of Erase suspend/resume commands, as these will introduce some latency penalties and will prevent the embedded operations from fast progressing.
Use the full Write Buffer size of 512 Bytes instead of the default value of 256 Bytes by setting the configuration register-3 CFR3x (PGMBUF) bit to 1.
Disable the 4 kB small sectors whenever possible by setting the configuration register-3 CFR3x (UNHYSA) bit to 1, as erasing these small sectors usually takes longer than erasing the big sectors of 256 kB.
Use short polling intervals and use the Status register polling approach to detect the exact time of complete of embedded operation. Avoid using a timeout period-based approach to limit the potential overhead.
Optimize the code binary for execution instead of optimizing it for code size using the appropriate compiler options.