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Knowledge Base Articles

Comparison between FM25V20A and CY15B102QN F-RAM

GirijaC_46
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Comparison between FM25V20A and CY15B102QN F-RAM

Knowledge Base Article discusses the key differences that need to be considered when migrating from FM25V20A to CY15B102QN. The two devices are identical in terms of package composition and dimensions, and read/write functionality. From a hardware point of view, two devices are identical. Form a software point of view, the key difference between the two devices are sleep mode (Hibernate mode) entry time, and Device ID. 

CY15B102QN adds many features like operation down to 1.8 V, deep power down capability, lower standby current and higher speed capability. Table 1 shows the compatibility chart of FM25V20A and CY15B102QN. For a detailed comparison of the devices, see Table 2.

Table 1. Compatibility Chart

FM25V20A Feature or Spec

CY15B102QN Compatible?

Package

Yes

Pinout

Yes

Temperature Range

Yes

Operating Voltage

Yes

Operating Current

Yes

Standby Current

Yes

Read / Write Function

Yes

Timing / Frequency

Yes

Data Retention

Yes

Endurance

Yes

 

Table 2. Detailed Comparison Table

 

FM25V20A

CY15B102QN

Comments

Package type

-G, -DG, -PG

-S, -LH, -PZ

Identical “Green (RoHS)” package for SOIC, DFN, PDIP

Pinout/package Outline

SOIC-8, DFN-8, PDIP-8

SOIC-8, DFN-8, PDIP-8

Identical outline and board footprint.

Temperature Range

–40 ºC to +85 ºC

–40 ºC to +85 ºC

Identical

Operating Voltage Range

2.0 V to 3.6 V

1.8 V to 3.6 V

CY15B102QN allows operation down to 1.8 V.

Active Supply Current (typ)

500 µA @ 1 MHz (SOIC/DFN)

1.5 mA @ 25 MHz (PDIP)

2.4 mA @ 40 MHz

-

-

-

2.4 mA @ 40 MHz

3.0 mA @ 50 MHz

Identical

Active Supply Current (Max)

800 uA @ 1MHz

2.0 mA @ 25MHz (PDIP)

3.0 mA @ 40 MHz

-

-

-

3.0 mA @ 40 MHz

3.7 mA @ 50 MHz

Standby Current

250 µA @ 85 ºC

70 µA @ 85 ºC

CY15B102QN offers lower standby current

Sleep Mode or Hibernate Current

8 µA

1.6 µA

CY15B102QN offers lower sleep mode current. Sleep function is called Hibernate in CY15B102QN.

CS# high to enter hibernate (tENTHIB)

-

3 µs

Different. Refer to Hibernate Mode section in “Device datasheet” for more details. Sleep mode of FM25V20A is refereed as Hibernate mode in CY15B102QN.

Read / Write Function

3-byte addressing,

op-codes

3-byte addressing,

op-codes

Identical

Clock Frequency

40 MHz

50 MHz

Higher speed offered in CY15B102QN

Data Retention

10 years (+85 ºC)

10 years (+85 ºC)

Identical

Endurance (Write/Read Cycles)

1E+14

1E+14

Identical

VDD Power-Up Ramp Rate (tVR)

50 µs / V

50 µs / V

Identical

VDD Power-Down Ramp Rate (tVF)

100 µs / V

100 µs / V

Identical

Power-Up to First Access (tPU)

1 ms

450 µs

Better power-up to first access specification in CY15B102QN

Device ID

7F7F7F7F7F7FC22508h

7F7F7F7F7F7FC22A00h

Different. Refer to Device ID section in “Device datasheet” for more details.

 

Refer to following listed datasheets for more details.

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