Anonymous
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Sep 02, 2013
04:23 AM
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Sep 02, 2013
04:23 AM
Hi,
Do you have any test data available for radiation exposure and SEU/SEL on the FRAM parts? I'm specifically looking at FM22LD16 parts, but anything would be good. Looking to get confidence in these parts for a radiation harsh environment.
cheers
Mat
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Anonymous
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Sep 15, 2013
01:21 PM
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Sep 15, 2013
01:21 PM
Volatile memories, DRAM and SRAM, use a capacitor to store charge or a simple latch to store state. These cells can be upset by alpha particles, cosmic rays, heavy ions, gamma, x-rays, etc. which cause bits to flip to an opposite state to cause a soft error. Since the F-RAM cell stores the state as a PZT film(lead zirconate titanate ) polarization, a particle hit is very unlikely to cause the polarization to change a given cell’s state.
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Anonymous
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Sep 05, 2013
08:40 PM
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Sep 05, 2013
08:40 PM
Anonymous
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Sep 15, 2013
01:21 PM
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Sep 15, 2013
01:21 PM
Volatile memories, DRAM and SRAM, use a capacitor to store charge or a simple latch to store state. These cells can be upset by alpha particles, cosmic rays, heavy ions, gamma, x-rays, etc. which cause bits to flip to an opposite state to cause a soft error. Since the F-RAM cell stores the state as a PZT film(lead zirconate titanate ) polarization, a particle hit is very unlikely to cause the polarization to change a given cell’s state.