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Hi Team,
Please let me know the accelerated write buffer programming time for S29GL512T.
And, please let me know the specific function of acceleration programming.
Think of it as a function to speed up writing, but it can not be read from the datasheet.
Thanks and regards,
Solved! Go to Solution.
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Hi,
S29GL512T does allow Vhh (12V) to be applied on the WP#/ACC pin; however, the high voltage will only cause the device to go into Unlock Bypass mode, where the user can save some CPU cycles by not having to enter unlock cycles. It will not have impact on the actual embedded operation time.
As a result, the WB Programming time is the same as the normal mode, but the user can skip the two unlock cycles in the WB Programming command sequence.
Hope this answers your question.
Best regards,
Zhi
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Hi,
S29GL512T does allow Vhh (12V) to be applied on the WP#/ACC pin; however, the high voltage will only cause the device to go into Unlock Bypass mode, where the user can save some CPU cycles by not having to enter unlock cycles. It will not have impact on the actual embedded operation time.
As a result, the WB Programming time is the same as the normal mode, but the user can skip the two unlock cycles in the WB Programming command sequence.
Hope this answers your question.
Best regards,
Zhi
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Hi,
Thank you for your information.
Is recognition the same as acceleration mode of S29GL-P series and S29GL-N series?The accelerated write buffer programming time is specified in S29GL-P and S29GL-N datasheet.
Why is not the accelerated write buffer programming time specified in S29GL-T datasheet?
Thanks and regards,
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Hi,
As I said, S29GL-T is different from S29GL-P and S29GL-N. In S29GL-T, there is no impact on the programming time, or programming current even if a high voltage is applied to ACC pin. Therefore, the programming time is the same as the programming time with normal voltage. In S29GL-P and S29GL-N, the programming time is actually faster so it is defined as a separate parameter. In another word, when applying high voltage to ACC pin, S29GL-P and S29GL-N will consume high programming current, but S29GL-T will consume the same current as in the normal voltage condition.
Thanks,
Zhi
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Hi,
Thank you for your information.
I understand this.
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To conclude this thread, here is the summary of Accelerated Programming feature.
Accelerated Programming Operation refers to the method of applying VHH (ex. 12V) to the WP#/ACC pin of the flash device in order to reduce the programming time. However, this feature is a little bit different in different flash families.
The following table shows the differences:
Device Family | MirrorBit Technology | When applying VHH to the WP#/ACC pin | |||
Enter Unlock Bypass mode | Temporarily unlock all sectors | Reduce programming time | Consume higher current | ||
S29GL-N | 110nm | Yes | Yes | Yes | Yes |
S29GL-P | 90nm | Yes | No | Yes | Yes |
S29GL-R | 65nm | Not supported | |||
S29GL-S | 65nm | Not supported | |||
S29GL-T | 45nm | Yes | No | No | No |
Thanks,
Zhi