Difference between Stand-by Current and Data Retention Current in Low Power SRAM - KBA229710

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    Translation - Japanese:  低消費電力SRAMのスタンバイ電流とデータ保持電流の違い - KBA229710 - Community Translated (JA)

     

    Question:
    What is the difference between stand-by current (Isb) and data retention current (Iccdr) in low power SRAM? Is the current consumption in inactive mode CE = HIGH) equal to the sum of stand-by and retention currents?

     

    Answer:
    Stand-by current (Isb) indicates the current consumption when the device is in inactive mode ( CE = HIGH). The datasheet mentions Isb1 and Isb2. The Isb1 value indicates the current consumption in inactive mode while the input signals (data and address) keep switching. Isb2 indicates the current consumption in inactive mode without the input signal switching.

     

    Data retention current (Iccdr) indicates the necessary current consumption to keep the data in the device. The Iccdr value is usually used to calculate the battery life in battery-backup SRAM solution.

     

    So, the current consumption in inactive mode ( CE = HIGH) is equal to stand-by current.