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Question: What are the differences between CY62147G/CY62147E/CY62157E /CY62167E and CY62146G/ CY62136F/ CY62146E Asynchronous SRAMs? Answer: The devices differ from each other in terms of Byte-power down featur... Question: What is the difference between an SRAM and a DRAM? Does Cypress manufacture DRAM's Answer: DRAM stands for Dynamic Random Access Memory. It is a type of semiconductor memory in which the memory i... Version: ** Question: What are the timing parameters of tDOE and tACE for an Asynchronous SRAM? When should you assert /CE and /OE so that you get valid data in tACE and tDOE time during a read operation? ... Version: ** Question: What are the main similarities and differences between the CY7C199C and CY7C199CN Async Fast SRAMs? Answer: Both CY7C199C and CY7C199CN are Asynchronous Fast SRAMs based on 0.25 ... Version: ** Question: What is a soft error (SE)? How do SEs affect semiconductor devices? What are the causes of SEs? Answer: An SE is a random, non-recurring change of state or transient in microelectr... Version: ** Question: How is error correcting code (ECC) implemented to mitigate soft errors in Cypress’s 65-nm Asynchronous SRAMs? Answer: Cypress’s 65-nanometer (65-nm) asynchronous SRAM d... Version: ** Question: What are the different ways to mitigate soft errors in Asynchronous SRAMs? Answer: The following methods are commonly used to mitigate soft errors: Changes in process tech... Version: ** Question: What is error correcting code (ECC)? How does it help in single-bit error detection and correction? Answer: Error correcting codes are algorithms that allow data that is being read... Question: Provide the characterization data for ISB2 vs Temp and ISB2 vs VCC Answer: Characterization data for CY62147EV30 is attached below Question: What are MoBL SRAMs? Answer: MoBL stands for More Battery Life. These SRAM's use up to 90% less power than the standard low-power SRAM's making them the industry's lowest power consumpti... Question: I used a SRAM which has a x32 configuration and now I am forced to use a x36 configuration. I have the 4 unused inputs floating. Is this okay? Answer: It is not recommended to leave the CMOS i... Question: What is the voltage at which we can ensure the contents of SRAM are completely erased? Answer: Data retention voltage could be explained as the lowest possible power supply voltage at which th... Question: Why is there a huge difference between the maximum standby current and the typical standby current. Answer: The SRAM's are designed to operate with less current in standby mode, however, in extreme ... Question: Is a part number decoder for the Ultra Low Power SRAM family available? Answer: Response: Find attached the part number decoder for the micro power SRAM family . Note that, the deco... Question: Can I interchange the address pins in Cypress Async SRAMs ? Or Can I interchange the data pins in Cypress Async SRAMs ? Answer: In Asynchronous SRAMs, the address pins (Ax) can be assign... Question: How does the Byte Power Down feature work in Cypress MoBL SRAMs ? or If I de-assert both BHE# & BLE#, will my device get deselected ? or Which devices have Byte Power Down feature available ?... Question: In MPWR SRAMs, when device wakes up from standby, is the time to write solely determined by tSCE? Answer: Yes. The minimum /WE pulse required to write the data into a memory cell is called the... Question: Is the P/N CY7C1041DV33 an interleaved part? Are the Logical bits physically adjacent in a RAM array? Answer: The device is an interleaved part. Two adjacent bits of a logical word are separated by ... Question: What will be the load capacitance of a Tri-State Data bus when more than one SRAM busses are connected together? Answer: Eventhough only one SRAM will be using the data bus at a time, it will see th... Question: Does this part have pull up resistors on the I/O pins? Answer: Yes, the CY62256 has pmos pull ups on the I/Os. Basically, this specific part is only designed to go up to 3.8V
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